منابع مشابه
A graphene nanoribbon memory cell.
S D C1 C2 Over the past few years there has been a surge of interest in graphene, a recently isolated [ 1 ] one-atom-thick layer of carbon atoms arranged in a honeycomb lattice. From the application point of view this interest has mainly been driven by the high carrier mobility of graphene [ 2–4 ] which enables fabrication of fi eld-effect transistors (FETs) with much smaller channel resistance...
متن کاملHalf - metallic Armchair Graphene Nanoribbon
Submitted for the MAR10 Meeting of The American Physical Society Half-metallic Armchair Graphene Nanoribbon FUMIYUKI ISHII, KEISUKE SAWADA, MINEO SAITO, Kanazawa University — Among a variety of applications of graphenes, spintronics applications are considered to be hopeful. For an example, spin transport has been experimentally observed by using graphene layers [1]. There are two types of shap...
متن کاملComputational study of tunneling transistor based on graphene nanoribbon.
Tunneling field-effect transistors (FETs) have been intensely explored recently due to its potential to address power concerns in nanoelectronics. The recently discovered graphene nanoribbon (GNR) is ideal for tunneling FETs due to its symmetric bandstructure, light effective mass, and monolayer-thin body. In this work, we examine the device physics of p-i-n GNR tunneling FETs using atomistic q...
متن کاملChemically derived, ultrasmooth graphene nanoribbon semiconductors.
We developed a chemical route to produce graphene nanoribbons (GNR) with width below 10 nanometers, as well as single ribbons with varying widths along their lengths or containing lattice-defined graphene junctions for potential molecular electronics. The GNRs were solution-phase-derived, stably suspended in solvents with noncovalent polymer functionalization, and exhibited ultrasmooth edges wi...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Physical Review B
سال: 2013
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.88.235424